BF998WR NXP N-channel dual-gate MOS-FET Datasheet, en stock, prix

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BF998WR

NXP
BF998WR
BF998WR BF998WR
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Part Number BF998WR
Manufacturer NXP (https://www.nxp.com/)
Description Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integ...
Features
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS
• VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is s...

Document Datasheet BF998WR Data Sheet
PDF 94.61KB
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