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BF998W |
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| Part Number | BF998W |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive devi... |
| Features |
kdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±V G2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) 0.8 2 -VG1S(p) 0.8 2.5 V IDSS 5 9 15 mA ±IG2SS 50 nA ±IG1SS 50 nA ±V (BR)G2SS 8 12 ±V (BR)G1SS 8 12 V(BR)DS 12 V Symbol m... |
| Document |
 BF998W Data Sheet
PDF 249.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF998 |
Infineon |
Silicon N-Channel MOSFET Tetrode |
|
| 2 | BF998 |
NXP |
Silicon N-channel dual-gate MOS-FETs |
|
| 3 | BF998 |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 4 | BF998 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 5 | BF998R |
Infineon |
Silicon N-Channel MOSFET Tetrode |
|