BLF7G22LS-250P |
Part Number | BLF7G22LS-250P |
Manufacturer | Ampleon |
Description | 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB ... |
Features |
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1... |
Document |
BLF7G22LS-250P Data Sheet
PDF 604.03KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | BLF7G22LS-250P |
NXP |
Power LDMOS transistor | |
2 | BLF7G22LS-200 |
Ampleon |
Power LDMOS transistor | |
3 | BLF7G22LS-130 |
NXP Semiconductors |
Power LDMOS transistor | |
4 | BLF7G22L-200 |
Ampleon |
Power LDMOS transistor | |
5 | BLF7G22L-250P |
Ampleon |
Power LDMOS transistor |