BF410D |
Part Number | BF410D |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Spe... |
Features |
are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D). PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate
BF410A to D
handbook, halfpage 2
1
3 g
MAM257
d s
Fig.1 Simplified outline and symbol
QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 75 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance VDS = 10 V; VGS = 0; f = ... |
Document |
BF410D Data Sheet
PDF 36.05KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BF410 |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
2 | BF410A |
NXP |
N-channel silicon field-effect transistors | |
3 | BF410A |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
4 | BF410B |
NXP |
N-channel silicon field-effect transistors | |
5 | BF410B |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR |