2SA1037 |
Part Number | 2SA1037 |
Manufacturer | JCST |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.15 A Co... |
Features |
Power dissipation
PCM : 0.2 W (Tamb=25℃) Collector current
ICM : -0.15 A Collector-base voltage
V(BR)CBO : -60 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency
Symbol V(BR)CBO... |
Document |
2SA1037 Data Sheet
PDF 39.28KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA103 |
ETC |
Ge PNP Drift Transistor | |
2 | 2SA1030 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
3 | 2SA1031 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
4 | 2SA1032 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
5 | 2SA1034 |
Panasonic Semiconductor |
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