2SA1031 - Hitachi Semiconductor

2SA1031 Silicon PNP Epitaxial Transistor

2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter.

Features

— — — — — — 280 3.3 — Max — — —
  –0.5
  –0.5 320
  –0.8
  –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C =
  –10 µA, IE = 0 I C =
  –1 mA, RBE = ∞ I E =
  –10 µA, IC = 0 VCB =
  –18 V, IE = 0 VEB =
  –2 V, IC = 0 VCE =
  –12 V, I C =
  –2 mA VCE =
  –12 V, I C =
  –2 mA I C =
  –10 mA, I B =
  –1 mA VCE =
  –12 V, I C =
  –2 mA VCB =
  –10 V, IE = 0, f = 1 MHz VCE =
  –6 V, I C =
  –0.1 mA, Rg = 500 Ω, f = 120 Hz Min
  –30
  –30
  –5 — — 100 — — 200 — — Typ — — — — — — — — 280 3.3 — Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product f T Collector output capacitance No.