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ME200N04T |
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| Part Number | ME200N04T |
| Manufacturer | Matsuki |
| Description | The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to m... |
| Features |
● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.7mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME200N04T (Pb-free) ME200N04T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current* TC=25℃ TC=70℃ ID 189 158 A Pulsed Drain Current IDM 755 A Maximum Power Dissipatio... |
| Document |
 ME200N04T Data Sheet
PDF 697.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME200N04T-G |
Matsuki |
N-Channel MOSFET |
|
| 2 | ME20N03 |
Matsuki |
N-Channel Enhancement MOSFET |
|
| 3 | ME20N10 |
Matsuki |
N-Channel 100V (D-S) MOSFET |
|
| 4 | ME20N10-G |
Matsuki |
N-Channel 100V (D-S) MOSFET |
|
| 5 | ME20N15 |
Matsuki |
N-Channel MOSFET |
|