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BPX65 |
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| Part Number | BPX65 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3s) Soldering temperature in 2 mm distance from case bottom (t ... |
| Features |
q Especially suitable for applications from 350 nm to 1100 nm q BPX 65: high photosensitivity q BPX 66: low reverse current (typ. 150 pA) q Hermetically sealed metal package (TO-18), suitable up to 125 oC1) Applications q Fast optical sensor of high modulation bandwidth Gehäuse Package 18 A3 DIN 41870, planes Glasfenster, hermetisch dichtes Gehäuse, Lötspieβe im 2.54-mm-Raster (2/10”), Anodenkennzeichnung: Nase am Gehäuseboden 18 A3 DIN 41870, flat glass lens, hermetically sealed package, solder tabs 2.54 mm (2/10”) lead spacing, anode marking: projection at package bottom
1) 1)
Eine Abstimm... |
| Document |
 BPX65 Data Sheet
PDF 207.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BPX60 |
Siemens Semiconductor Group |
Silizium-Fotodiode mit erhohter Blauempfindlichkeit Silicon Photodiode with Enhanced Blue Sensitive |
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| 2 | BPX61 |
Siemens Semiconductor Group |
Silizium-PIN-Fotodiode Silicon PIN Photodiode |
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| 3 | BPX61 |
OSRAM |
Silicon NPN Phototransistor |
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| 4 | BPX63 |
Siemens Semiconductor Group |
Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current |
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| 5 | BPX63 |
OSRAM |
Silicon Photodiode |
|