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BR211-260 |
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| Part Number | BR211-260 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current together with high peak current... |
| Features |
perature Operating ambient temperature Overload junction temperature 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state CONDITIONS MIN. -65 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/µs W W ˚C ˚C ˚C
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
THERMAL RESISTANCES
SYMBOL Rth j-e Rth j-a Zth j-a Rth e-tp Rth e-a Rth tp-a PARAMETER Thermal resistance junction t... |
| Document |
 BR211-260 Data Sheet
PDF 32.67KB |
| Distributor | Stock | Price | Buy |
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