BR211-200 - NXP

BR211-200 Breakover diodes

A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical applications include transient overvoltage protection in telecommunications equipment. QUICK REFERENCE DATA SYMBOL V(BO) IH ITSM .

Features

perature Operating ambient temperature Overload junction temperature 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state CONDITIONS MIN. -65 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/µs W W ˚C ˚C ˚C August 1996 1 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series THERMAL RESISTANCES SYMBOL Rth j-e Rth j-a Zth j-a Rth e-tp Rth e-a Rth tp-a PARAMETER Thermal resistance junction t.