M58BW016FT |
Part Number | M58BW016FT |
Manufacturer | Numonyx |
Description | M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VD... |
Features |
Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional) High performance – Access times: 70, 80 ns – 56 MHz effective zero wait-state burst read – Synchronous burst read – Asynchronous page read Hardware block protection – WP pin for write protect of the 2 outermost parameter blocks and all main blocks – RP pin for write protect of all blocks Optimized for FDI drivers – Fast program / erase suspend latency time < 6 µs – Common Flash interface Memory blocks – 8 parameters blocks (top or bottom) –... |
Document |
M58BW016FT Data Sheet
PDF 0.97MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58BW016FB |
Numonyx |
16 Mbit 3V supply Flash memories | |
2 | M58BW016BB |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories | |
3 | M58BW016BT |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories | |
4 | M58BW016DB |
Numonyx |
16 Mbit 3V supply Flash memories | |
5 | M58BW016DB |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories |