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BSP300 |
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| Part Number | BSP300 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BSP 300 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 800 V ID 0.19 A RDS(on) 20 Ω Packa... |
| Features |
150 -55 ... + 150
°C
≤ 70 ≤ 14
E 55 / 150 / 56
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 800 -
Gate threshold voltage
V GS=V DS, ID = 1 mA
V GS(th)
2
IDSS
3
4 µA
Zero gate voltage drain current
V DS = 800 V, V GS = 0 V, Tj = 25 °C V DS = 800 V, V GS = 0 V, Tj = 125 °C
IGSS
0.1 10
1 100 nA
Gate-source leakag... |
| Document |
 BSP300 Data Sheet
PDF 114.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP30 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
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| 2 | BSP30 |
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Surface mount Si-Epitaxial PlanarTransistors |
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| 3 | BSP300 |
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SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
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| 4 | BSP304 |
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P-channel enhancement mode vertical D-MOS transistors |
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| 5 | BSP304A |
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