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BSP30 |
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| Part Number | BSP30 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY... |
| Features |
Collecor Tab Max Max 62.5 8
o o
C/W C/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = -60 V V CB = -60 V T j = 150 C -70 -90 -60 -80 -70 -90 -5 o Min. Typ. Max. -100 -50 Unit nA µA V V V V V V V I C = -100 µ A for BSP30/BSP31 for BSP32/BSP33 I C = -10 mA for BSP30/BSP31 for BSP32/BSP33 I C = -10 µ A for BSP30/BSP31 for BSP32/BSP33 I C = -10 µ A V (BR)CEO ∗ Collector-Emitter... |
| Document |
 BSP30 Data Sheet
PDF 73.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSP30 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
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| 2 | BSP300 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
|
| 3 | BSP300 |
Infineon Technologies AG |
SIPMOS Small-Signal Transistor |
|
| 4 | BSP304 |
NXP |
P-channel enhancement mode vertical D-MOS transistors |
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| 5 | BSP304A |
NXP |
P-channel enhancement mode vertical D-MOS transistors |
|