Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BSP149 |
Click to view a larger image
| Part Number | BSP149 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIPMOS® Small-Signal Transistor BSP 149 q q q q q q q VDS 200 V ID 0.48 A RDS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and ... |
| Features |
ctor Group
1
09.96
BSP 149
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 200 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.03 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.48 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f ... |
| Document |
 BSP149 Data Sheet
PDF 328.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP145 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 2 | BSP149 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
| 3 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 4 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 5 | BSP106 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|