BUZ70 |
Part Number | BUZ70 |
Manufacturer | Siemens Semiconductor Group |
Description | BUZ 70 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 70 VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-... |
Features |
Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 3 0.1 10 10 0.12 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.15
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 7.5 A
Semiconductor Group
2
07/96
BUZ 70
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Chara... |
Document |
BUZ70 Data Sheet
PDF 199.63KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUZ70L |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ71 |
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N-CHANNEL POWER MOSFET | |
3 | BUZ71 |
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4 | BUZ71 |
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5 | BUZ71 |
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