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Features
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t
V(BR)DSS
-200 -3 -0.1 -10 -10 1.2 -4
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
-1 -100
µA
VDS = -200 V, VGS = 0 V, Tj = 25 °C VDS = -200 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
-100
nA Ω 1.5
VGS = -20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = -10 V, ID = -2.3 A
Semiconductor Group
2
07/96
BUZ 173
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
1.1...
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BUZ173 Data Sheet
