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Features
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25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 3 0.1 10 10 0.03 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.04
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 19 A
Semiconductor Group
2
07/96
BUZ 11 S2
Not for new design
Electrical Characteristics,...
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BUZ11S2 Data Sheet
