BUZ11S2FI - STMicroelectronics

BUZ11S2FI N-Channel MOSFET

BUZ11S2 BUZ11S2FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 10 - 30 A 20 A • VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE/Crss RATIO INDUSTRIAL APPLICATIONS: • AUTOMATIVE POWER ACTUATORS N - channel enhancement mode POWER MaS field effect transistors. .

Features

°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 60 V 60 V ±20 V 120 A BUZ11S2 BUZ11S2FI 30 20 A 75 35 W -55 to 150 °c 150 °c E 55/150/56 1/5 177 BUZ11 S2 - BUZ11 S2FI THERMAL DATARthj _case Thermal resistance junction-case Rthj _amb Thermal resistance junction-ambient TO-220 ISOWATT220 max 1.67 3.57 max 75 °CIW °CIW ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Conditions OFF ~8R) oss Drai.