GPT04N60A - Greatpower

GPT04N60A POWER FIELD EFFECT TRANSISTOR

FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.  .

Features

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.       Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP TO-251/ TO-251S Top View Front View TO-252 Front View D GA.