BUL54A-TO5 - TT

BUL54A-TO5 SILICON POWER NPN TRANSISTOR

SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accura.

Features

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• Multi
  –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector
  – Base Voltage (IE = 0) 1000V VCEO Collector
  – Emitter Voltage (IB = 0) 500V VEBO Emitter
  – Base Voltage (Ic = 0) 10V IC Continuous Collector Current 4A PTOT Total Power Dissipation at Tc = .