BUK9535-55 |
Part Number | BUK9535-55 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giv... |
Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.
BUK9535-55
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 34 85 175 35 UNIT V A W ˚C mΩ
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum S... |
Document |
BUK9535-55 Data Sheet
PDF 65.29KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUK9535-55A |
NXP Semiconductors |
N-Channel MOSFET | |
2 | BUK9535-100A |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
3 | BUK953R2-40B |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
4 | BUK953R2-40E |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
5 | BUK953R5-60E |
NXP Semiconductors |
N-Channel MOSFET |