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BUK9508-55 |
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| Part Number | BUK9508-55 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giv... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.
BUK9508-55
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 75 187 175 8 UNIT V A W ˚C mΩ
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum S... |
| Document |
 BUK9508-55 Data Sheet
PDF 64.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUK9508-55 |
NXP |
TrenchMOS transistor Logic level FET |
|
| 2 | BUK9508-55A |
NXP |
logic level FET |
|
| 3 | BUK9508-55A |
Philips |
transistor Logic level FET |
|
| 4 | BUK9508-55B |
NXP |
N-channel TrenchMOS logic level FET |
|
| 5 | BUK9504-40A |
NXP |
(BUK9x04-40A) TrenchMOS logic level FET |
|