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2SB688 |
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| Part Number | 2SB688 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SB688 TRANSISTOR (PNP) FEATURES z High Breakdown Voltage z Complement to Type 2SD718 APPLICATIONS z Power Amp... |
| Features |
z High Breakdown Voltage z Complement to Type 2SD718
APPLICATIONS z Power Amplifier Applications
TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -120 -120 -5 -8 3 42 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base brea... |
| Document |
 2SB688 Data Sheet
PDF 112.37KB |
| Distributor | Stock | Price | Buy |
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