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2SD886 |
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| Part Number | 2SD886 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD886 TRANSISTOR (NPN) TO – 126C FEATURES z General Purpose Amplifier Transistor 1. EMITTER 2. COLLECTOR... |
| Features |
z General Purpose Amplifier Transistor
1. EMITTER 2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 50 50 5 3 1 125 150
-55~+150
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
... |
| Document |
 2SD886 Data Sheet
PDF 102.55KB |
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