2SA1201 |
Part Number | 2SA1201 |
Manufacturer | GME |
Description | Plastic-Encapsulate Transistors FEATURES z High voltage z High transition frequency z Small flatpackage z Complementary to 2SC2881 Pb Lead-free Production specification 2SA1201 ORDERING INFORMATIO... |
Features |
z High voltage z High transition frequency z Small flatpackage z Complementary to 2SC2881
Pb
Lead-free
Production specification
2SA1201
ORDERING INFORMATION
Type No.
Marking
2SA1201
DO/DY
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
IC Collector Current
-800
IB Base Current
-160
PC Collector Dissipation
500
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mA mW ℃
E037 Rev.A
www.gmicroelec.co... |
Document |
2SA1201 Data Sheet
PDF 199.40KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR | |
2 | 2SA1200 |
Kexin |
PNP Transistors | |
3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
4 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors | |
5 | 2SA1201 |
UTC |
SILICON PNP EPITAXIAL TRANSISTOR |