L8050 |
Part Number | L8050 |
Manufacturer | LRC |
Description | LESHAN RADIO COMPANY, LTD. TO-92 Plastic-Encapsulate Transistors L8050 TRANSISTOR˄ NPN˅ FEATURES Power dissipation PCM : 1 W ˄Tamb=25ć˅ Collector current ICM: 1.5 A Collector-base voltage V(BR... |
Features |
Power dissipation
PCM : 1 W ˄Tamb=25ć˅
Collector current
ICM: 1.5 A Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJˈTstg: -55ć to +150ć
˄ ćELECTRICAL CHARACTERISTICS Tamb=25
unless
üTO 92
1.EMITTER
2.BASE
3. COLLECTOR
123
˅otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A ˈ IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 Aˈ IC=0
5
V
Collector cut-off current
ICBO VCB... |
Document |
L8050 Data Sheet
PDF 197.68KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | L8050 |
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Silicon NPN transistor | |
2 | L8050HPLT1G |
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3 | L8050HPLT3G |
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4 | L8050HQLT1G |
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5 | L8050HQLT3G |
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