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2SB624 |
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| Part Number | 2SB624 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2... |
| Features |
z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2SD596.
SOT-23
1.BASE 2.EMITTER 3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-30 V
VCEO
Collector-Emitter Voltage
-25 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-700
mA
PD Total Device Dissipation
200 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage Coll... |
| Document |
 2SB624 Data Sheet
PDF 352.90KB |
| Distributor | Stock | Price | Buy |
|---|
