2SB621A - Panasonic Semiconductor

2SB621A Silicon PNP Transistor

Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.0±0.2 Unit: mm 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 750 150 –55 ~ +150 Unit V s Absolute Maximum Ratings Paramete.

Features

0.45
  –0.1 +0.2 0.45
  –0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1.27 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO
  –92 EIAJ:SC
  –43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB621 2SB621A 2SB621 2SB621A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
* Conditions VCB =
  –20V, IE = 0 IC =
  –10µA, IE = 0 IC =
  –2mA, IB = 0 IE =.