NGTB30N135IHRWG |
Part Number | NGTB30N135IHRWG |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior perf... |
Features |
a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology • 1350 V Breakdown Voltage • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effective Single Die Solution • These are Pb−Free Devices Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating... |
Document |
NGTB30N135IHRWG Data Sheet
PDF 176.49KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NGTB30N135IHR1WG |
ON Semiconductor |
IGBT | |
2 | NGTB30N120FL2WG |
ON Semiconductor |
IGBT | |
3 | NGTB30N120IHLWG |
ON Semiconductor |
IGBT | |
4 | NGTB30N120IHRWG |
ON Semiconductor |
IGBT | |
5 | NGTB30N120IHSWG |
ON Semiconductor |
IGBT |