EMD04N60AB |
Part Number | EMD04N60AB |
Manufacturer | Excelliance MOS |
Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.4Ω ID 4A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXI... |
Features |
YMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON) gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125 °C
VGS = 10V, ID = 2A VDS = 25V, ID = 2A
DYNAMIC
600
V
2.5 3.5 4.5
±100 nA
10 A
25
2.1 2.4 Ω
2
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate‐Sour... |
Document |
EMD04N60AB Data Sheet
PDF 195.73KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMD04N60AK |
Excelliance MOS |
MOSFET | |
2 | EMD04N60CS |
Excelliance MOS |
MOSFET | |
3 | EMD04N60CSB |
Excelliance MOS |
MOSFET | |
4 | EMD04N60CSK |
Excelliance MOS |
MOSFET | |
5 | EMD04N60F |
Excelliance MOS |
MOSFET |