EMD04N60CS |
Part Number | EMD04N60CS |
Manufacturer | Excelliance MOS |
Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.5Ω ID 4A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXI... |
Features |
TER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON) gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125 °C
VGS = 10V, ID = 2A VDS = 25V, ID = 2A
DYNAMIC
600
V
23
5
±100 nA
10 A
25
2.1 2.5 Ω
2
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance Total Gate Charge1,2 Gate‐Source Charge1,2 Gat... |
Document |
EMD04N60CS Data Sheet
PDF 193.26KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMD04N60CSB |
Excelliance MOS |
MOSFET | |
2 | EMD04N60CSK |
Excelliance MOS |
MOSFET | |
3 | EMD04N60AB |
Excelliance MOS |
MOSFET | |
4 | EMD04N60AK |
Excelliance MOS |
MOSFET | |
5 | EMD04N60F |
Excelliance MOS |
MOSFET |