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EMD04N65CS |
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| Part Number | EMD04N65CS |
| Manufacturer | Excelliance MOS |
| Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 650V D RDSON (MAX.) 2.75Ω ID 4A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAX... |
| Features |
ETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON) gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 650V, VGS = 0V VDS = 520V, VGS = 0V, TJ = 125 °C
VGS = 10V, ID = 2A VDS = 25V, ID = 2A
DYNAMIC
650
V
23
5
±100 nA
10 A
25
2.3 2.75 Ω
2
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance Total Gate Charge1,2 Gate‐Source Charge1,2 G... |
| Document |
 EMD04N65CS Data Sheet
PDF 192.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMD04N65A |
Excelliance MOS |
MOSFET |
|
| 2 | EMD04N65F |
Excelliance MOS |
MOSFET |
|
| 3 | EMD04N60AB |
Excelliance MOS |
MOSFET |
|
| 4 | EMD04N60AK |
Excelliance MOS |
MOSFET |
|
| 5 | EMD04N60CS |
Excelliance MOS |
MOSFET |
|