Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
TSU5N60M |
Click to view a larger image
| Part Number | TSU5N60M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
| Features |
- 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
GDS
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalan... |
| Document |
 TSU5N60M Data Sheet
PDF 289.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TSU5N65M |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSU50R550S1 |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSU5511 |
ETCTI |
SP3T SWITCH WITH IMPEDANCE DETECTION |
|
| 4 | TSU5611 |
ETCTI |
DP3T Switch w/Imped Detect Micro-USB Switch Supports USB UART Audio Chrgr Det (Rev. A) |
|
| 5 | TSU05A60 |
Nihon Inter Electronics |
FRD |
|