This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 3.0A, 650V, RDS(on) = 3.0Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSU5N60M |
Truesemi |
N-Channel MOSFET | |
2 | TSU50R550S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSU5511 |
ETCTI |
SP3T SWITCH WITH IMPEDANCE DETECTION | |
4 | TSU5611 |
ETCTI |
DP3T Switch w/Imped Detect Micro-USB Switch Supports USB UART Audio Chrgr Det (Rev. A) | |
5 | TSU05A60 |
Nihon Inter Electronics |
FRD | |
6 | TSU05B60 |
Nihon Inter Electronics |
FRD | |
7 | TSU101 |
STMicroelectronics |
operational amplifiers | |
8 | TSU102 |
STMicroelectronics |
operational amplifiers | |
9 | TSU104 |
STMicroelectronics |
operational amplifiers | |
10 | TSU10A60 |
Nihon Inter Electronics |
FRED | |
11 | TSU10B60 |
Nihon Inter Electronics |
FRED | |
12 | TSU111 |
STMicroelectronics |
5V CMOS operational amplifier |