This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V
• Low gate charge ( typical 15nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G
●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF3N80M |
Truesemi |
N-Channel MOSFET | |
2 | TSF302D00A-S4 |
Token |
Saw Filters | |
3 | TSF302D00B-S7 |
Token |
Saw Filters | |
4 | TSF303D825A-D1 |
Token |
Saw Filters | |
5 | TSF303D825B-S4 |
Token |
Saw Filters | |
6 | TSF303D875A-D1 |
Token |
Saw Filters | |
7 | TSF303D875B-S4 |
Token |
Saw Filters | |
8 | TSF30H100C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
9 | TSF30H120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
10 | TSF30H150C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
11 | TSF30H200C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
12 | TSF30U45C |
Taiwan Semiconductor |
Trench Schottky Rectifier |