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CES2317 |
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| Part Number | CES2317 |
| Manufacturer | CET |
| Description | CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. High dense cell design for extr... |
| Features |
-30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package.
DS G
SOT-23
G
D S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -3.1 IDM -12
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistan... |
| Document |
 CES2317 Data Sheet
PDF 387.02KB |
| Distributor | Stock | Price | Buy |
|---|
