MT4435L2 - Mos-Tech

MT4435L2 P-Channel Enhancement Mode Field Effect Transistor

Mos-Tech Semiconductor Co.,LTD. MT4435L2 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package PRODUCT SUMMARY VDSS -30V ID -7A RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.5V D S NOTE：The MT4435L2 is available in a lead-free packag.

Features

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● Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package PRODUCT SUMMARY VDSS -30V ID -7A RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.5V D S NOTE：The MT4435L2 is available in a lead-free package G G S D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ±20 -7 -24 -1.8 5.