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WFU1N60C |
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| Part Number | WFU1N60C |
| Manufacturer | Winsemi |
| Description | Silicon N-Channel MOSFET Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(... |
| Features |
� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
Th is Power MOSFET is produced using Winsemi ’ s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
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| Document |
 WFU1N60C Data Sheet
PDF 256.68KB |
| Distributor | Stock | Price | Buy |
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