S29WS-P - SPANSION

S29WS-P Burst Simultaneous Read/Write MirrorBit Flash Memory

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Features

„ Single 1.8 V read/program/erase (1.70
  –1.95 V) „ 90 nm MirrorBit™ Technology „ Simultaneous Read/Write operation with zero latency „ Random page read access mode of 8 words with 20 ns intra page access time „ Full /Half drive output slew rate control „ 32 Word / 64 Byte Write Buffer „ Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively „ Four 16 Kword sectors at both top and bottom of memory array „ 510/254/126 64Kword sectors (WS512/256/128P) „ Programmable linear (8/16/32) with or without wrap around and continuous burst read modes „ Secured Silicon Sector .