BCF060T |
Part Number | BCF060T |
Manufacturer | BeRex |
Description | BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally ... |
Features |
• 25.0 dBm Typical Output Power • 12.5 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.3 X 600 Micron Recessed Gate Applications • Commercial • Military / Hi-Rel • Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltag... |
Document |
BCF060T Data Sheet
PDF 345.80KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCF020T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | |
2 | BCF030T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | |
3 | BCF040T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | |
4 | BCF080T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | |
5 | BCF120T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |