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BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 1200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well .
• 28.0 dBm Typical Output Power
• 11.0 dB Typical Power Gain @ 12 GHz
• Low Phase Noise
• 0.3 X 1200 Micron Recessed Gate
Applications
• Commercial
• Military / Hi-Rel
• Test & Measurement
ELECTRICAL CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
Idss Saturated Drain Current (Vgs = 0V, Vds = 3V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCF020T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
|
| 2 | BCF030T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
|
| 3 | BCF040T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
|
| 4 | BCF060T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
|
| 5 | BCF080T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
|
| 6 | BCF240T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
|
| 7 | BCF29 |
NXP |
PNP general purpose transistors |
|
| 8 | BCF29 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
|
| 9 | BCF29 |
Guangdong Kexin |
(BCF29 / BCF30) PNP General Purpose Transistors |
|
| 10 | BCF30 |
NXP |
PNP general purpose transistors |
|
| 11 | BCF30 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
|
| 12 | BCF30 |
Guangdong Kexin |
(BCF29 / BCF30) PNP General Purpose Transistors |
|