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MRF559 |
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| Part Number | MRF559 |
| Manufacturer | Microsemi (https://www.microsemi.com/) |
| Description | Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Volt... |
| Features |
• Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 15... |
| Document |
 MRF559 Data Sheet
PDF 206.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF553 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR |
|
| 2 | MRF553 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 3 | MRF553 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | MRF553 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF553G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|