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CS1N60B3R |
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| Part Number | CS1N60B3R |
| Manufacturer | Huajing Microelectronics |
| Description | CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 32... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.2nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Dr... |
| Document |
 CS1N60B3R Data Sheet
PDF 0.97MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS1N60B1R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS1N60 |
EDN |
VDMOS |
|
| 3 | CS1N60A1H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS1N60A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS1N60C1H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|