CS10N60FA9HD Huajing Microelectronics Silicon N-Channel Power MOSFET Datasheet, en stock, prix

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CS10N60FA9HD

Huajing Microelectronics
CS10N60FA9HD
CS10N60FA9HD CS10N60FA9HD
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Part Number CS10N60FA9HD
Manufacturer Huajing Microelectronics
Description CS10N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanch...
Features l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single P...

Document Datasheet CS10N60FA9HD Data Sheet
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