BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 9.5 A ID(Tc=100℃) 5.7 A IDM 38 .
Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 9.5 A ID(Tc=100℃) 5.7 A IDM 38 A VGSS ±20 V EAS 700 mJ EAR 15.6 mJ IAR 9.5 A RθJC 2.5 ℃/W RθJA 62.5 ℃/W PD(Tc=25℃) 50 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions Min Typ Max BVDSS VGS=0V ID=250μA 600 IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±20V VDS=0V 1.0 10 ±10 VGS(th) VDS=VGS ID=250μA 2.0 4.0 RDS(on) gFS VSD Ciss Coss Crss td(on) VGS=10V VDS=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS10N60 |
ETC |
VDMOS Transistor | |
2 | CS10N60A8HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS10N60A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS10N60FA9HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS10N60FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS10N65A8HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS10N65A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS10N65FA9HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
9 | CS10N65FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS10N50A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
11 | CS10N50FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
12 | CS10N70A8D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |