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CS2N65A3HY |
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| Part Number | CS2N65A3HY |
| Manufacturer | Huajing Microelectronics |
| Description | VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching R... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C ... |
| Document |
 CS2N65A3HY Data Sheet
PDF 241.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS2N65A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS2N65A4HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS2N65A8 |
HUAJING |
Silicon N-Channel Power MOSFET |
|
| 4 | CS2N65FA9HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS2N60 |
LZG |
N-CHANNEL MOSFET |
|