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CS2N65A4HY |
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| Part Number | CS2N65A4HY |
| Manufacturer | Huajing Microelectronics |
| Description | CS2N65 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data: 9nC) l Low Reverse transfer capacitances(Typical: 6pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single... |
| Document |
 CS2N65A4HY Data Sheet
PDF 545.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS2N65A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS2N65A3HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS2N65A8 |
HUAJING |
Silicon N-Channel Power MOSFET |
|
| 4 | CS2N65FA9HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS2N60 |
LZG |
N-CHANNEL MOSFET |
|