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CS10N60A8R |
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| Part Number | CS10N60A8R |
| Manufacturer | Huajing Microelectronics |
| Description | CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ener... |
| Features |
l Fast Switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 V 10 A 130 W 0.68 Ω
l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain C... |
| Document |
 CS10N60A8R Data Sheet
PDF 265.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS10N60A8HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS10N60 |
ETC |
VDMOS Transistor |
|
| 3 | CS10N60F |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 4 | CS10N60FA9HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS10N60FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|