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CS5N20A3 |
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| Part Number | CS5N20A3 |
| Manufacturer | Huajing Microelectronics |
| Description | CS5N20 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche en... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7nC) l Low Reverse transfer capacitances(Typical:8pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of Video doorphone.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch... |
| Document |
 CS5N20A3 Data Sheet
PDF 623.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS5N20A4 |
Huajing Microelectronics |
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| 2 | CS5N20FA9 |
Huajing Microelectronics |
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| 3 | CS5N65A3 |
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Silicon N-Channel Power MOSFET |
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| 4 | CS5N65A4 |
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Silicon N-Channel Power MOSFET |
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| 5 | CS5N65A7H |
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Silicon N-Channel Power MOSFET |
|