CS5N20FA9 - Huajing Microelectronics

CS5N20FA9 Silicon N-Channel Power MOSFET

VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 20 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7nC) l Low Reverse transfer capacitances(Typical:8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of Video doorphone. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 .